首页> 外文会议>2015 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS >Dielectric charging frequency response of MEMS switches with insulator-insulator contact
【24h】

Dielectric charging frequency response of MEMS switches with insulator-insulator contact

机译:具有绝缘子-绝缘子触点的MEMS开关的介电充电频率响应

获取原文
获取原文并翻译 | 示例

摘要

An extensive dielectric charging characterization is presented based on MEMS test structures with insulator-insulator contact. Surface charging by triboelectric effects has been the main mechanism that degrades the switch performance when both insulators are in contact. Surface charging not only changes by the applied electric field needed to close the switch, but also by the driving frequency. In this paper, we analyze and report the surface charging effects based on the applied electric field and cycling frequency. The results have shown a logarithmic time dependence of the surface charge generated at DC levels with a low pass filter characteristic at higher frequencies. Measurements show a cutoff frequency of approximately 100 Hz, so driving frequencies beyond 100 Hz will show a reduction of the amount of charge generated.
机译:基于具有绝缘体-绝缘体接触的MEMS测试结构,提出了广泛的介电充电特性。当两个绝缘子接触时,摩擦电效应引起的表面充电一直是降低开关性能的主要机理。表面充电不仅会因闭合开关所需的外加电场而发生变化,而且还会随驱动频率而变化。在本文中,我们根据施加的电场和循环频率来分析和报告表面电荷效应。结果表明,在直流电平下产生的表面电荷具有对数时间依赖性,在较高频率下具有低通滤波器特性。测量显示截止频率约为100 Hz,因此超过100 Hz的驱动频率将显示所产生电荷的减少。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号