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Crystal growth of Ca3Nb(Ga0.75Al0.25)3O14 piezoelectric bulk single crystal

机译:Ca 3 Nb(Ga 0.75 Al 0.25 3 O 14 的晶体生长压电体单晶

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摘要

We grew a Al 25% substituted CaNbGaSiO, CaNb(GaAl)SiO (CNGAS) bulk single crystal with a diameter of 1 inch by Czochralski (Cz) method. Cracks in the crystal were dramatically decreased by the optimization of temperature gradient. Result of powder X-ray measurement indicated the grown CNGAS bulk single crystal was a single phase of langasite-type phase and lattice parameters, a- and c-axes lengths, decreased by the Al substitution. X-ray rocking curve of polished CNGS specimen indicated the grown CNGS bulk single crystal had great crystallinity.
机译:我们通过切克劳斯基(Cz)方法生长了直径为1英寸的Al 25%取代的CaNbGaSiO,CaNb(GaAl)SiO(CNGAS)块状单晶。通过优化温度梯度,可大大减少晶体中的裂纹。 X射线粉末测量结果表明,生长的CNGAS块状单晶为单相的langasite型相,晶格参数,a轴和c轴长度因Al的取代而减小。抛光的CNGS试样的X射线摇摆曲线表明,生长的CNGS块状单晶具有很大的结晶度。

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