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Dynamie simulation for microelectronic packaging of Al pad/underlying pad structure during copper wire bonding

机译:铜线键合过程中铝垫/下垫结构微电子封装的动态模拟

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For decades, wire bonding technology has been widely used to interconnect IC chip and the substrate in microelectronic package. In recent years, due to the increasing cost of gold, the copper wires started to be employed in microelectronic package instead, lowing the production cost. The additional benefits include superior performance of copper wires, in terms of electrical and thermal property. Thus, it is likely that, the gold wires will be replaced by the copper gradually in the future. However, greater hardness of the copper wire and weak mechanical strength of low-k dielectric layers lead to higher stress in the Al pad and the underlying pad structure during the thermo-sonic bonding process. An additional concerns arises, as the Al pad is squeezed out by copper ball, which may affect the development of fine pitch. Therefore, it is necessary to redesign the bonding pad, as well as adjust the bonding parameters, such as bonding pressure, ultrasonic energy and bonding time. As finite element software enables dealing with the wire bonding process by a transient nonlinear dynamic analysis, a finite element model for copper wire bonding is developed to investigate the mechanical behavior. The simulation results would focus on the dynamic stress response of wire bonding model and the plastic strain of the Al pad. In order to save computational time and reduce modeling complexity, the copper wire bonding is represented by a simplified 2-D finite element model, whereby the complete wire bonding process mechanism is treated as consisting solely of impact and ultrasonic vibration stages. The calculation of nonlinear transient structural behavior is carried out using an explicit time integration scheme. In the present study, the simulation results indicate that the stress wave would rapidly transfer from the bonding interface to the underlying pad structure when copper ball is in contact with the Al pad. With the increasing contact area, the stress wave path would shift - rom the inside bonding pad to the outside, resulting in the spread of the stress concentration.
机译:数十年来,引线键合技术已广泛用于互连IC芯片和微电子封装中的基板。近年来,由于金价的上涨,铜线开始被用于微电子封装中,从而降低了生产成本。在电气和热性能方面,其他好处还包括铜线的优越性能。因此,将来金线可能会逐渐被铜取代。但是,铜线的较高硬度和低k介电层的较弱机械强度会导致在热超声键合过程中,铝焊盘和下面的焊盘结构承受较高的应力。由于铝焊盘被铜球挤出,因此引起了其他问题,这可能会影响细间距的发展。因此,有必要重新设计键合焊盘,并调整键合参数,例如键合压力,超声能量和键合时间。由于有限元软件能够通过瞬态非线性动力学分析处理引线键合过程,因此开发了用于铜线键合的有限元模型以研究机械行为。仿真结果将集中在引线键合模型的动态应力响应和铝垫的塑性应变上。为了节省计算时间并减少建模复杂性,铜线键合由简化的二维有限元模型表示,其中,完整的线键合过程机制被视为仅包括冲击和超声振动阶段。非线性瞬态结构行为的计算使用显式时间积分方案进行。在本研究中,仿真结果表明,当铜球与Al焊盘接触时,应力波将从键合界面迅速转移到下面的焊盘结构。随着接触面积的增加,应力波的路径会从内部的焊盘移到外部,从而导致应力集中的扩散。

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