Observation of in situ B-doped Epitaxial Ge layer growth on Si(111) by ultra-high vacuum chemical vapor deposition

摘要

In situ B-doped epitaxial Ge layers were grown on a Si(111) substrate using UHV CVD for the application to S/D regions of pMOS devices. The Ge surface evolution with the deposition time, showing (111) terrace structures, were influenced by the B2H6 flow rate.