Room 2-305, Rohm Building, Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084;
Absorption; Analytical models; Avalanche photodiodes; Charge carrier processes; Gallium nitride; PIN photodiodes; Performance evaluation;
机译:背照式GaN雪崩光电二极管中的空穴引发的倍增
机译:GaN / 4H-SiC异质结雪崩光电二极管中的乘法宽度依赖性雪崩特性
机译:高能质子辐照对分离吸收和倍增GaN雪崩光电二极管的影响
机译:一种实现前照射GaN雪崩光电二极管的孔发起乘法的方法
机译:具有碰撞电离工程倍增区域的低噪声雪崩光电二极管。
机译:基于GaN / AlN周期性堆叠结构的雪崩光电二极管的低温相关特性
机译:具有大器件面积的GaN p-i-n雪崩光电二极管的稳定倍增增益