Power dissipation effects on 28nm FPGA-based System on Chips neutron sensitivity

摘要

Modern System on Chips (SoCs) and embedded electronic devices work at very high frequencies, which have the countermeasure of increasing the power dissipation and, consequently, the silicon die temperature. The presented radiation experiments on a 28nm FPGA-based SoC demonstrate that the temperature variation caused by a higher operating frequency affects the FPGA configuration memory cross section. An evaluation and discussion of the observed reliability dependence on power dissipation effects on practical application is also presented.