Rapid Thermal Annealing on dS/Cu(In,Ga)Se2-based Solar Cells

摘要

In order to improve the performance of CIGS solar cell,Rapid thermal annealing (RTA)was performed on Cu(In,Ga)Se2 (CIGS) solar cells under various annealing temperature (110％,150％,180％,2 min holding time) in air ambient.Hall-effect,SEM and J-V measurements were carried out on CIGS films and cells before and after RTA treatments.The results show that the RTA treatment (annealing temperature～150％,holding time～2 min),as the optimal annealing condition,can greatly improve not only the quality of absorber film,but also the cell performance (including fill factor,open-circuit voltage).An highefficiency of cell was achieved from 13.2％ to 15.3％ after the optimal RTAtreatment.