Study and comparison of MOSFET and MIGFET-based active inductor

摘要

In this paper, MOSFET-based and MIGFET-based active inductors configured using gyrator principle is studied and their tunability is compared in 45 nm technology node. It is found that MIGFET-based configuration greatly improves the tuning range of the active inductor than MOSFET-based configuration. The tunability range achieved in MIGFET-based active inductor is from 2 GHz to 260 GHz as compared with 25 GHz to 63 GHz in MOSFET-based active inductor configuration.