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The effect of MOSFET second-order nonlinearity on active inductor-based oscillators

机译:MOSFET二阶非线性对有源电感振荡器的影响

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摘要

Second-order nonlinearity of the MOSFET has significant impact on active inductor (AI) based oscillators, regardless of whether they are single-ended or differential. By using Taylor series expansion, this paper shows that second-order nonlinearity of the MOSFET will cause a shift in the DC biasing of an AI-based oscillator, depending on oscillation amplitude. The DC bias shift results in a change of the transistor transconductance and parasitic components from their original value, which will affect the oscillator resonance frequency. This explains why a small-signal S-parameter simulation is not sufficient to accurately predict the oscillation frequency and tuning range of AI-based oscillators, even at moderate oscillation amplitudes.
机译:MOSFET的二阶非线性对基于有源电感器(AI)的振荡器产生重大影响,无论它们是单端还是差分振荡器。通过使用泰勒级数展开,本文表明MOSFET的二阶非线性将导致基于AI的振荡器的直流偏置发生偏移,具体取决于振荡幅度。 DC偏置偏移会导致晶体管跨导和寄生成分从其原始值发生变化,这将影响振荡器的谐振频率。这就解释了为什么即使在中等振幅的情况下,小信号S参数仿真仍不足以准确预测基于AI的振荡器的振荡频率和调谐范围。

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