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A 0.1dB NF, 2GHz low power CMOS low noise amplifier

机译:一个0.1dB NF,2GHz低功耗CMOS低噪声放大器

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摘要

Short range applications find significant usage in different areas such as industrial process automation and environmental monitoring. Power consumption and noise figure are important constraint for short range application as it carries limited and irreplaceable power sources. This paper describes a CMOS low noise amplifier (LNA) suitable for low voltage short range application. The reported LNA exhibits the best noise performance when compared with existing circuits. The proposed LNA operates at 2 GHz with noise figure (NF) of 0.1 dB, input and output reflection coefficients are S11, S22 <−10 dB, power gain S21=16 dB and power dissipation of approximately 8 mW from 0.8 V power supply. A standard 90 nm PTM CMOS process is used for simulation.
机译:短距离应用在诸如工业过程自动化和环境监控等不同领域中都有重要用途。功耗和噪声系数是短距离应用的重要限制,因为它承载的电源有限且不可替代。本文介绍了适用于低压短程应用的CMOS低噪声放大器(LNA)。与现有电路相比,报告的LNA具有最佳的噪声性能。拟议的LNA在2 GHz的频率下工作,噪声指数(NF)为0.1 dB,输入和输出反射系数为S11,S22 <-10 dB,功率增益S21 = 16 dB,从0.8 V电源获得的功耗约为8 mW。使用标准的90 nm PTM CMOS工艺进行仿真。

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