One-step formation of atomic-layered transistor by selective fluorination of graphene film

摘要

In this work, the wafer scale fabrication of atomic layered transistors are demonstrated by selective fluorination of graphene with a remote CF4 plasma, where the generated F-radicals preferentially fluorinated graphene surface at low temperature (<200°C) while this technique suppress the defect formation by screening out the ion damage effect. The resultant grapehene shows electrical semiconducting and isolation after subjected to the fluorination for 5∼20min, respectively. A back-gate transistor is then fabricated with a one-step fluorination of graphene film on Si02 substrate. The chemical structure, C-F bonds, is well correlated to the electrical properties in fluorinated graphene by XPS, Raman spectroscopy and electrical meter. This efficient method provide electrical semiconducting and insulator of graphene with a large area and selective pattering, where it turns out the potential for the integration of electronics down to atomic layered scale.