Interface Defective Effect on Performance of (p+)µc-SiC:H/(i)a-Si:H/(n+)a-Si:H Solar Cells

摘要

Photovoltaic cell with superstrate structure of (p+)a-SiC:H/buffer/(i)a-Si:H/(n+)a-Si:H was optimized and cell performance was analyzed by a numerical software of one-dimensional device simulation program of analysis of microelectronic and photonic structures (AMPS-1D) in this paper. The consanguineous relations between current-voltage characteristics, charge transport, heterojunction band offset and performance to the p/i interface defective states were elucidated. The results indicate that the performance shows sensitive to cell structures and material interface defective states. The optimum conversion efficiency coincides to a suitable thickness of optical absorption layer. Interface defective states especially those in p/i region can serious limit the open circuit voltage and full factor. Inserting an applicable buffer layer at p/i interface to alleviate interface states can improve the performance of studied photovoltaic cells.