Arrangement selected crystallization of different thickness from 100nm to 350nm of amorphous silicon thin films on glass were prepared by 248nm wavelength UV excimer laser. A cleverly designed 5-dot-mask was used to reshape the laser beam and the sample was placed and scanned by laser on a XY-Axis translation stage with the movement controlled by a programmable controller accurately in order to optimize the process conditions, different kinds of laser energies and thickness of amorphous silicon thin films were utilized. The laser-crystallized samples were characterized by Raman spectrometer, metallurgical microscope and scanning electron microscope (SEM). From the results we tend to draw the following conclusion that the poly-Si seed layer can gain better crystallization quality with higher laser pulse energy and thinner amorphous silicon thin films.
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