High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain

摘要

We report the first Ω-gate Germanium (Ge) p-channel FinFET with low-temperature Si2H6 passivation and implantless Schottky-barrier nickel germanide (NiGe) metallic Source/Drain, formed on high-quality GeOI substrates using sub-400 °C process modules. As compared with reported multi-gate (MuG) Ge devices in which the Ge channels were formed by top-down approaches, the Ge FinFETs in this work have a record high on-state current ION of ∼494 µA/µm at VGS - VTH = −1 V and VDS = −1 V. A high ION/IOFF ratio of more than 3×10⁴ and a high peak saturation transconductance GMSatMax of ∼540 µS/µm were achieved.