Effect of interfacial states on the technological variability of trigate MOSFETs

摘要

This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (VT) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (Dit). Different Dit(E) profiles have been considered, analyzing their influence for several device geometries.