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A digital neuromorphic VLSI architecture with memristor crossbar synaptic array for machine learning

机译:具有忆阻器交叉开关突触阵列的数字神经形态VLSI架构,用于机器学习

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This paper presents a reconfigurable digital neuromorphic VLSI architecture for large scale spiking neural networks. We leverage the memristor nanodevice to build an N×N crossbar array to store synaptic weights with significantly reduced area cost. Our design integrates N digital leaky integrate-and-fire (LIF) neurons and the respective on-line learning circuits for a spike timing-dependent learning rule. The proposed analog-to-digital conversion scheme accumulates pre-synaptic weights of a neuron efficiently and reduces silicon area by using only one shared adder for processing LIF operations of N neurons. The proposed architecture is shown to be both area and power efficient. With 256 neurons and 64K synapses, the power dissipation and the area of our design are evaluated as 9.46-mW and 0.66-mm2, respectively, in a 90-nm CMOS technology.
机译:本文提出了一种用于大规模尖峰神经网络的可重构数字神经形态VLSI架构。我们利用忆阻器纳米器件来构建N×N交叉开关阵列,以显着降低面积成本来存储突触权重。我们的设计集成了N个数字泄漏集成点火(LIF)神经元和各自的在线学习电路,以实现与峰值时序相关的学习规则。提出的模数转换方案通过仅使用一个共享的加法器来处理N个神经元的LIF运算,有效地累积了神经元的突触前权重,并减少了硅面积。所提出的架构显示出在面积和功率上均有效。在90nm CMOS技术中,具有256个神经元和64K突触,我们的设计功耗和面积分别为9.46-mW和0.66-mm 2

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