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NEUROMORPHIC MEMRISTOR CROSSBAR CIRCUIT

机译:神经形态记忆跨电路

摘要

The present invention is to provide a neuromorphic memristor crossbar circuit having a twin crossbar circuit consisting of two identical crossbar arrays of image-recognition binary memristor. The neuromorphic memristor crossbar circuit comprises a first crossbar array composed of a memristor array composed of N X M memristors and storing an image vector, a second crossbar array composed of the first crossbar array and a memristor array having a twin crossbar structure, receiving an inverted vector of the input vector of the first crossbar array and storing the inverted image vector, a subtractor for subtracting the output vector of the first crossbar array and the output vector of the second crossbar array and measuromg the amount of similarity, and a winner-take-all circuit part which compares the amount of similarity measured by the subtractor with a stored image vector, selects and outputs a stored image vector having the most similarity.;COPYRIGHT KIPO 2017
机译:本发明提供了一种神经形态忆阻器交叉开关电路,其具有由两个相同的图像识别二进制忆阻器的相同交叉开关阵列组成的双交叉开关电路。神经形态忆阻器交叉开关电路包括由包含NXM忆阻器的忆阻器阵列组成并存储图像矢量的第一交叉开关阵列,由第一交叉器阵列和具有双交叉开关结构的忆阻器阵列组成的第二交叉开关阵列,接收第一交叉开关阵列的输入向量并存储反转的图像矢量;减法器,用于减去第一交叉开关阵列的输出向量和第二交叉开关阵列的输出向量,并测量相似度,以及获胜者通吃电路部分,将减法器测得的相似度与存储的图像矢量进行比较,选择并输出具有最大相似度的存储的图像矢量。; COPYRIGHT KIPO 2017

著录项

  • 公开/公告号KR101912881B1

    专利类型

  • 公开/公告日2018-10-30

    原文格式PDF

  • 申请/专利权人 국민대학교 산학협력단;

    申请/专利号KR20160032826

  • 发明设计人 트롱녹손;민경식;

    申请日2016-03-18

  • 分类号G11C13/00;G06N3/063;G11C11/54;H03K19/177;

  • 国家 KR

  • 入库时间 2022-08-21 12:36:52

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