Optimized data assessment for hot carrier and Fowler-Nordheim stresses on thick MOS gate oxides with plasma process induced charging damage

摘要

In this work experimental data of thick MOS gate oxides (25 nm) of a state of the art 90 nm technology are assessed for degradation from plasma induced charging (PID). It is demonstrated that the type of stress measurement and the data analysis approach are crucial for the interpretation of the experimental data and for lifetime estimation. Two PID stress measurements are compared: hot carrier stress and Fowler-Nordheim stress. Different data analysis concepts illustrate that the usual technique can give misleading analysis results, just calculating the drift of MOS transistor parameters. It is shown that the type of PID protection for MOS transistor test structures plays a significant role in the misinterpretation of MOS device data.