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Memory binding and layer assignment for high-level synthesis of 3D ICs

机译:存储器绑定和层分配,用于3D IC的高级综合

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摘要

In modern SOC design, communications between logic circuits and memories often become the bottlenecks of system performance. Among different types of memories, DRAM is especially suitable for large quantity of data storage. To reduce both the wire distance and bandwidth between logic circuits and DRAM modules, three dimensional integrated circuits (3D ICs) is one of the promising solutions. In this paper, we propose a K-L algorithm for memory binding and layer assignment of memory modules in high-level synthesis of 3D ICs. By the proposed memory binding technique, we can increase the number of row buffer hits for data accesses of DRAM modules, and hence improve the system performance. In addition, by the layer assignment of memory modules proposed in our algorithm, we can reduce the area of memory tier in the 3D ICs architectures. Experimental results show that our algorithm can balance the performance and hardware cost of memory accesses, and get a feasible solution for the tested benchmarks.
机译:在现代SOC设计中,逻辑电路和存储器之间的通信通常成为系统性能的瓶颈。在不同类型的存储器中,DRAM特别适合于大量数据存储。为了减少逻辑电路和DRAM模块之间的连线距离和带宽,三维集成电路(3D IC)是一种有前途的解决方案。在本文中,我们提出了一种K-L算法,用于在3D IC的高级合成中进行内存绑定和内存模块的层分配。通过提出的内存绑定技术,我们可以增加用于DRAM模块数据访问的行缓冲区命中数,从而提高系统性能。另外,通过我们算法中提出的存储模块的层分配,我们可以减少3D IC架构中的存储层面积。实验结果表明,我们的算法可以在内存访问的性能和硬件成本之间取得平衡,并为测试基准提供了可行的解决方案。

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