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Flux residue cleaning process optimization effect on Flip Chip Ball Grid Array reliability

机译:助焊剂残留物清洁工艺优化对倒装芯片球栅阵列可靠性的影响

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This paper discusses the evaluation and characterizations of the cleaning the organic residues on Flip Chip Ceramic Ball Grid Array (FCCBGA) package. Flux used for Control Collapse Chip Connection (C4) die attachment during assemblies could remain on the die surface as organic residues, thus affecting the integrated circuit performance. Therefore, the effect of implementation flux-cleaning process on the die cleanliness was evaluated. Design of Experiments (DOE) for cleaning chemical parameters using water-based solvents was carried out to investigate the flux-cleaning efficiency. The response for the experiments conducted was die surface cleanliness. The presence and levels of contaminations would be analyzed and characterized using Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and Ion chromatography (IC). The optimization process required the integration between mechanical and chemical parameters. Chemical cleaning parameters optimization was aided with Micro Phase Cleaning (MPC) as solvent. Wash temperature and solvent concentration were varied to find the optimal cleaning. Whilst for mechanical parameters, washing pressure, and nozzle orientation are the expected parameters that would give impact to the cleaning process. From the experiments, the cleaning process is optimized with 3% of MPC solvent added into the pure DI water with longer wash exposure time 0.3 m/mm at 10 Psi with 75°C. The optimization result is proven with thermal cycle testing where no delammation or voids are detected even after 2500x.
机译:本文讨论了在倒装芯片陶瓷球栅阵列(FCCBGA)封装上清洁有机残留物的评估和特性。在组装过程中用于控制塌陷芯片连接(C4)芯片附着的助焊剂可能以有机残留物的形式保留在芯片表面,从而影响集成电路的性能。因此,评估了实施助焊剂清洗工艺对模具清洁度的影响。进行了使用水基溶剂清洁化学参数的实验设计(DOE),以研究助焊剂清洁效率。进行的实验的响应是模具表面的清洁度。将使用扫描电子显微镜(SEM),傅里叶变换红外光谱(FTIR)和离子色谱(IC)对污染物的存在和水平进行分析和表征。优化过程需要机械和化学参数之间的集成。化学清洗参数优化以微相清洗(MPC)为溶剂进行辅助。改变洗涤温度和溶剂浓度以找到最佳清洁效果。对于机械参数,清洗压力和喷嘴方向是预期参数,会对清洗过程产生影响。从实验中可以看出,清洗工艺是通过将3%的MPC溶剂添加到纯去离子水中来实现的,在10 Psi和75°C下,清洗暴露时间更长,为0.3 m / mm。通过热循环测试证明了优化结果,即使在2500x之后也没有发现分层或空洞。

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