首页> 外文会议>2012 IEEE 14th Electronics Packaging Technology Conference >Overcoming dicing challenges for low-K copper wafers using nickel-palladium-gold bond pads for automotive application
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Overcoming dicing challenges for low-K copper wafers using nickel-palladium-gold bond pads for automotive application

机译:克服汽车应用中使用镍钯金金焊盘的低K铜晶圆的切割挑战

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New automotive mission profiles include more than 3500 total hours at 150ºC. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on the development of dicing process for low-K-copper wafers having aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold Over Pad Metallization (OPM). Development wafers were pizza mask wafers on which multiple die designs and scribe grid production control (SGPC) modules were designed. SGPC modules are designed with aluminum probe pads that are used to monitor wafer-level process control. All aluminum features on the wafer were plated with nickel/palladium/gold OPM. With nickel about four times as hard as aluminum, OPM plated SGPC's were much more difficult to dice than conventional SGPC's with aluminum pads. Cracking on silicon sidewall with crack propagating towards the die was found to cause back-end-of-line (BEOL) delamination and device failure. Surface roughness and hardness measurements were taken on OPM variations. Extensive mechanical dicing studies were conducted to modulate the failures and resolve the dicing challenge. Laser grooving followed by mechanical dicing of OPM wafers was also performed. Packages underwent extensive reliability stress conditions. The associated process improvements described in this paper supported a successful integration of a 55nm die technology in Low Profile Quad Flat Package with Exposed Pad (LQFP-EP) meeting and exceeding AEC grade 0 requirements.
机译:新的汽车任务配置文件包括在150ºC时超过3500小时。为了满足新的汽车要求,塑料包装必须满足AEC等级0或更高等级。常规塑料封装的一个主要限制是在铝焊盘上使用金焊线。在高温存储条件下由于金属间相变而导致的Au-Al金属间降解仍然是主要的可靠性问题。在铝键合焊盘或铜键合焊盘上使用镍/钯,镍/金或镍/钯/金对焊盘进行再金属化可提供高贵而可靠的金属互连。这项研究的重点是为低K铜晶圆切割工艺的开发,该晶圆的铝焊盘经过化学镀镍/化学钯/浸金覆盖焊盘金属化(OPM)进行了再金属化。开发晶片是披萨掩模晶片,在其上设计了多个管芯设计和划线网格生产控制(SGPC)模块。 SGPC模块设计有铝制探针垫,用于监控晶圆级工艺控制。晶圆上的所有铝部件均镀有镍/钯/金OPM。镍的硬度约为铝的四倍,因此,OPM镀层SGPC的切割难度比带铝垫的传统SGPC的切割困难得多。发现在硅侧壁上出现裂纹,且裂纹向芯片传播,这会导致线路后端(BEOL)分层和器件故障。表面粗糙度和硬度测量是基于OPM变化进行的。进行了广泛的机械切割研究,以调节故障并解决切割挑战。还进行了激光开槽,然后对OPM晶圆进行机械切割。包装经受了广泛的可靠性压力条件。本文中描述的相关工艺改进支持了55纳米管芯技术成功地集成在具有裸焊盘(LQFP-EP)的薄型四方扁平封装中,满足并超过了AEC 0级要求。

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