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Alternative solution for non stick on pad on gold coated palladium bond pad

机译:镀金钯键合垫上的不粘垫的替代解决方案

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Au coated Pd bond pad was developed for better reliability has provided advantage which helps to cater for harder copper wire bonding process (as compared to Au wire bonding) that reduces or eliminates silicon cratering. However, this bond pad design introduces another challenge in copper wire bonding: the NSOP. According to Wu-Hu Li et.al, one of the probable root causes is the inter diffusion of Au and Pd layer causing oxidation of the Pd surface. With the formation of PdO on the bond pad surface, good copper wire bonding bond ability was hindered [1]. Similar NSOP was reported in this study. AES analysis on the NSOP pads found foreign element of Sn was detected despite the known Pd and Au. Additionally, O element signal is observed on top of Pd in depth profiling results indicating the influence of O towards NSOP pads. Tracking back to the processes, the source of Sn was from die attach material and this subsequently raised the next concern of flux residue from solder paste that lead to NSOP. XPS was recommended for the pad analysis in this case to characterize Sn, O elements (O from flux or metal oxide) and flux residue. Based on XPS data interpretation, SnO seems to give the responsive behavior to the NSOP pads. In view the effort of metal oxide reduction or elimination is needed, Ar/H2 plasma was chosen as H2 was able to form radical during plasma cleaning process and react chemically with metal oxide. Removal of metal oxide is more effective and at higher rate using Ar/H2 compared to pure ion bombardment effect from argon gas. DOE was conducted using Ar and Ar/H2 plasma cleaning, significant reduction of NSOP rate was observed in the DoE using Ar/H2 compared to Ar and Ar/H2 definitely is needed to achieve high wire bonding yield. Additionally, in order to further understand the surface condition of the pads, TEM/EDX analysis was also carried out. SnPd spikes were observed. Understanding of the correlation between SnPd spikes and NSOP is carried out. FESEM an- lysis result shows no correlation of NSOP with SnPd spikes as both NSOP and non NSOP pad also having equal amount of SnPd spike.
机译:开发具有Au涂层的Pd焊盘是为了获得更高的可靠性,并提供了优势,可帮助满足更硬的铜线键合工艺(与Au线键合相比),从而减少或消除了硅缩孔。但是,这种焊盘设计在铜线接合中带来了另一个挑战:NSOP。根据Wu-Hu Li等人的说法,可能的根本原因之一是Au和Pd层的相互扩散,导致Pd表面氧化。随着焊盘表面上PdO的形成,良好的铜线键合键合能力受到了阻碍[1]。在这项研究中报告了类似的NSOP。在NSOP焊盘上进行AES分析发现,尽管已知Pd和Au,但仍检测到了异物Sn。另外,在深度剖析结果中,在Pd顶部观察到O元素信号,表明O对NSOP焊盘的影响。追溯到工艺,锡的来源来自芯片连接材料,这随后引起了人们对焊膏中助焊剂残留导致NSOP的下一个担忧。在这种情况下,建议使用XPS进行焊盘分析,以表征Sn,O元素(来自焊剂或金属氧化物的O)和焊剂残留物。根据XPS数据解释,SnO似乎可以使NSOP焊盘具有响应性。考虑到需要减少或消除金属氧化物的努力,选择了Ar / H2等离子体,因为H2能够在等离子体清洁过程中形成自由基并与金属氧化物发生化学反应。与从氩气中进行纯离子轰击相比,使用Ar / H2去除金属氧化物更有效且速率更高。使用Ar和Ar / H2等离子体清洗进行DOE,与Ar和Ar / H2相比,使用Ar / H2在DoE中观察到NSOP速率显着降低,绝对需要Ar / H2以实现高引线键合良率。另外,为了进一步了解垫的表面状况,还进行了TEM / EDX分析。观察到SnPd尖峰。了解SnPd尖峰和NSOP之间的相关性。 FESEM分析结果显示,NSOP与SnPd尖峰没有相关性,因为NSOP和非NSOP焊盘也具有相等数量的SnPd尖峰。

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