Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

摘要

The electrostatic crosstalk in the 3D vertical CTM (Charge Trapping Memory) NAND NVM is investigated with various typical operation conditions. The junctionless FET of GAA (Gate-All-Around) nanowire with O/N/O (Oxide/Nitride/Oxide) dielectrics is simulated as the storage cell. The electrostatic properties of two neighbor cells of a NAND string are evaluated under typical conditions corresponding to the program operation. The results are help to design and optimize the new structures of 3D CTM NAND Flash.