The hybrid silicon (Si) device platform based on a low-temperature O2 plasma-assisted wafer bonding technique [1] has recently stood out as one of the most promising solutions for Si photonic integrated circuits [2]. Demonstrated key components, e.g., lasers, amplifiers, modulators, photodetectors, have shown excellent performance [2], while high-quality epitaxial transfer up to 150 mm in diameter also paves the way toward large scale manufacturing [3]. One remaining question is whether those hybrid devices are able to show similar reliability as conventional pure III-V counterparts. In this work we report for the first time a reliability study on fabricated hybrid Si distributed feedback (DFB) laser with a quarter-wave shifted cavity design. We investigate the influence on reliability of a superlattice between the lasing region and the bonded interface.
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