Design of Laterally Index-Coupled Grating III-V on Thin-SOI Distributed Feedback Lasers

摘要

We present performance analysis of laterally index-coupled grating-based /4-phase shifted heterogeneous III–V/Si distributed feedback laser diode. The laterally index-coupled grating has advantage of undistorted transverse mode profile with changes in layer and grating dimensions for targeting coupling coefficient. The coupling coefficient is inversely proportional to the central gap spacing of the grating. It ranges from sub-100 to 330 cm for III–V ridge-widths from 2 to 4 , etch-depths of 120 to 240 nm. The maximum possible optical output power ranges from 2 to 6 mW, based on device thermal impedances calculated by 2-D finite-element model.