Effect of annealing duration on the memristive behavior of Pt/TiO2/ITO memristive device

摘要

A titanium dioxide (TiO2) based memristive device was fabricated and investigated for its memristive behavior. In this paper, the effect of annealing duration on the memristive behavior of device was studied. TiO2 thin films were deposited on ITO substrate using RF magnetron sputtering method and then annealed in nitrogen at 450°C for 10, 30 and 60min. Characterization of current-voltage (I-V) measurement and surface morphology using scanning electron microscopy (FESEM) between annealed and nonannealed samples were investigated. From the result, it shows that sample annealed at 450°C for 60min resulted in switching loop with high conductivity when negative bias is applied probably due to the presence of high oxygen vacancies.