Temperature dependent two-state lasing in quantum dot lasers

摘要

We model two-state lasing from the ground state and the excited state in quantum dot lasers with microscopically based rate equations. We find that carrier heating tends to suppress ground state lasing and to lower the threshold of excited state lasing. Furthermore the damping of the excited state turn-on dynamics is increased. Also band-structure effects upon two-state lasing are investigated. All these effects can be traced back to changes in the nonlinear scattering rates.