Correlation of acoustic emission, light fluctuations surface and three-dimensional distribution EL intensity in InGaN/GaN structures

摘要

It is shown that the probable mechanism of fluctuations of surface and three-dimensional EL intensity distribution of light-emitting heterostructure is occurrence and burning-off of local pipes in areas, which because of the nonuniform distribution of indium in InxGa1−xN solid solution and influences of dislocation system have greater conductance