Influence of the underlap length on the RF noise performance of a Schottky Barrier MOSFET

摘要

This paper is focused on the analysis of the high-frequency dynamic and noise performance and the static characteristics of n-type Schottky barrier (SB) MOSFETs on SOI substrate. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling transport at the Schottky interfaces has been used. Quantum transmission coefficients and treatment of image charge effects on the Schottky barrier have been carefully considered. The influence of the underlap length on the main figures of merit is described, thus showing the importance of this architecture parameter for the optimization of these devices.