Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

摘要

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III‒V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-µm-long two-finger emitter. The complete nonlinear modeling of heterojunction bipolar transistor used in this circuit is described. The interest of the methodology used to design this oscillator, is to be able to choose a nonlinear operating condition of the transistor from a study in amplifier mode. The oscillator simulation and measurement results are compared. The measured phase noise is −85dBc/Hz at 100KHz offset from carrier.