Fully understanding the mechanism of misalignment-induced narrow-transistor failure and carefully evaluating the misalignment-tolerant SRAM-cell layout

摘要

We have demonstrated a misalignment-tolerant SRAM cell successfully, whose layout has been created from consideration of narrow-transistor failure through physical and electrical analyses. To evaluate an advantage of the layout, we have performed an intentionally misaligned experiment using a test structure with each SRAM block featuring a neighbor alignment-inspection mark.