InGaP/GaAs Superlattice-Emitter Bipolar Transistor with InGaAs/GaAs Superlattice-Base Structure

摘要

In this article, the performance of a novel InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure is demonstrated by experimental results. The injecting electrons from superlattice emitter are easy to transport into the superlattice-base region for promoting the collector current by tunneling behavior. Furthermore, the average energy gap of base regime is substantially reduced by the use of InGaAs/GaAs superlattice structure for the requirement of low turn-on voltage. Experimentally, the transistor exhibits a maximum common-emitter current gain of 295 and a relatively low collectoremitter voltage of only 16 mV. In particular, the ideality factor of collector current near to unity is obtained. Based on the excellent transistor performance, the studied can provide a promise for signal amplifier and low-power circuit applications.