Dept. of Comput. Commun. Syst., Univ. Putra Malaysia, Serdang, Malaysia;
CMOS integrated circuits; cache storage; integrated circuit manufacture; microprocessor chips; silicon-on-insulator; UTB-SOI transistor; advanced CMOS manufacturing; architectural-level simulation; device-level simulation; discrete random dopants; integrated circuit; intrinsic parameter fluctuation; microprocessor; microprocessor cache memory system; semiconductor process technology; size 13 nm; size 25 nm; source-drain region; ultrathin-body SOI MOSFET;
机译:内在参数波动对纳米MOSFET器件和电路中高频特性的影响
机译:固有参数波动对In_(0.75)Ga_(0.25)As无注入MOSFET的性能的影响
机译:纳米CMOS器件中内在参数波动对电路和系统的影响
机译:建筑级别在内在参数波动的影响框架
机译:随机离散电荷的从头算散射及其对纳米CMOS器件内在参数波动的影响
机译:视觉重复率对视觉网络中低频波动固有特性的影响
机译:内禀参数涨落的统计紧凑模型参数提取策略