机译:固有参数波动对In_(0.75)Ga_(0.25)As无注入MOSFET的性能的影响
Department of Electronics & Computer Science, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain;
Department of Electronics & Computer Science, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain;
Department of Electronics & Computer Science, University of Santiago de Compostela, 15782 Santiago de Compostela, Spain;
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland, UK;
Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland, UK;
机译:纳米级无In_(0.75)Ga_(0.25)As MOSFET掺杂剂中掺杂剂诱导的可变性的3D'原子'模拟
机译:30 nm栅极长度In_(0.75)Ga_(0.25)As无注入MOSFET中与掺杂剂有关的随机变化
机译:植入物自由复合通道的高性能和可靠性分析(0.53)GA_(0.47)AS / INAS / IN_(0.53)GA_(0.47)作为Δ掺杂MOSFET
机译:MONTE CARLO模拟IN_(0.75)GA_(0.25)作为MOSFET,适用于0.5 V电源电压,适用于高性能CMOS
机译:随机离散电荷的从头算散射及其对纳米CMOS器件内在参数波动的影响
机译:高性能极限电流氧传感器由高活性La0.75Sr0.25Cr0.5Mn0.5O3电极组成
机译:两种声子模三元合金中的电子 - 声子耦合 $ al_ {0.25} In_ {0.75} as / Ga_ {0.25} In_ {0.75} as量子井