Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, PR China;
Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, PR China;
Key Laboratory of Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, PR China;
State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University,Xi'an 710049, PR China;
机译:N_2:(N_2 + Ar)的流量比和衬底温度对反应性直流磁控溅射制备氮化锆膜性能的影响
机译:N_2与(N_2 + Ar)混合物的流量比对射频磁控溅射制备氮化锆薄膜结构和性能的影响
机译:通过在Ar / O_2 / N_2射频磁控等离子体中溅射钽靶标来控制氧氮化钽薄膜的成分
机译:不同N_2 / AR流量溅射氮化钽膜的表面粗糙化和微观结构
机译:磁控溅射合成氮化钽薄膜的表征。
机译:通过磁控溅射中氮流量的氮气流量调节的Ti-Zr三元氮化物薄膜的结构组成和等离子体特性
机译:反应直流磁控溅射在高Ar流量下制备的氮化锆薄膜中的颜色变化
机译:用于HmC(混合微电路)应用的氮化钽,钛和钯薄膜沉积的DC磁控溅射系统的表征。