首页> 外文会议>2009 International conference on semiconductor technology for ultra large scale integrated circuits and thin film transistors (ULSIC vs. TFT) >Surface Roughening and Microstructure of Tantalum Nitride Films Sputtered at Different N_2/Ar Flow Ratios
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Surface Roughening and Microstructure of Tantalum Nitride Films Sputtered at Different N_2/Ar Flow Ratios

机译:不同N_2 / Ar流量比溅射氮化钽薄膜的表面粗糙度和微观结构

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摘要

Tantalum nitride (Ta-N) films with different thicknesses varying from 50 nm to 1000 nm were deposited on Si(111) substrates by reactive magnetron sputtering as a function of N_2/Ar flow ratio. Microstructure and surface morphology were investigated by using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. With increasing NVAr flow ratio, the film structures undergo a gradual transition from polycrystalline structure to amorphous along with the changes of phase composition. Film surface roughness R_(rms) first increases and then decreases.
机译:根据N_2 / Ar流量比,通过反应磁控溅射在Si(111)衬底上沉积厚度从50nm到1000nm不等的氮化钽(Ta-N)膜。分别通过X射线衍射(XRD)和原子力显微镜(AFM)研究了显微组织和表面形态。随着NVAr流量比的增加,薄膜结构随着相组成的变化从多晶结构逐渐过渡到非晶态。膜表面粗糙度R_(rms)首先增大,然后减小。

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