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Interface Resistance between Polymer Based Conducting and Resistive Layers

机译:聚合物基导电层和电阻层之间的界面电阻

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摘要

We have studied the interface resistance between the polymer based conducting and resistive thick film layers. The samples were made using different resistive pastes and dipping silvers. The composite of carbon and graphite (C/Gr) conducting particles suspended in different polymer vehicles were used for the thick film resistive layers preparation. Interface resistance R_1 created between the contact layer made from dipping silver (DiAg) and resistive layer was determined from the surface potential distribution measurements and its value was less than 1% of total sample resistance. Measuring apparatus DISPOT? designed in our laboratory provides the measuring of a surface potential distribution. The measuring probe is sliding on the surface of measured structure and potential change between the successive steps is normalized by the total current flowing through the structure. Elementary step (the shortest distance between two measurements) is 1.25 μm. The equipment is arranged for current and voltage four-point measurement. Jump in potential on the interface between DiAg and C/Gr layer corresponds to the contact resistance R_1 which is created between these layers. Interface resistance plays important role in the capacitors technology thus the analysis of the charge carrier transport through the interface between different layers can be used to improve the low ESR capacitors technology.
机译:我们已经研究了基于聚合物的导电厚膜层和电阻厚膜层之间的界面电阻。样品是使用不同的电阻膏和浸银制成的。悬浮在不同聚合物载体中的碳和石墨(C / Gr)导电颗粒复合材料用于厚膜电阻层的制备。通过表面电势分布测量确定由浸银(DiAg)制成的接触层和电阻层之间产生的界面电阻R_1,其值小于总样品电阻的1%。测量仪器DISPOT?我们实验室中设计的传感器可以测量表面电势分布。测量探针在被测结构的表面上滑动,连续步骤之间的电位变化通过流过结构的总电流归一化。基本步长(两次测量之间的最短距离)为1.25μm。该设备被安排用于电流和电压四点测量。 DiAg和C / Gr层之间的界面上的电位跃变对应于在这些层之间产生的接触电阻R_1。界面电阻在电容器技术中起着重要作用,因此,通过不同层之间的界面对电荷载流子传输的分析可用于改进低ESR电容器技术。

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