Growth of 3C-SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method

摘要

We have grown 3C-SiC nanowires on nickel coated Si(100) substrates using single source precursors by thermal metal-organic chemical vapor deposition (MOCVD) method. Dichloromethylvinylsilane (CH_2CHSi(CH_3)Cl_2) and diethylmethylsilane (CH_3SiH(C_2H_5)_2) were used as a single precursor without any carrier and bubbler gas. 3C-SiC nanowires with 40 ～ 100 nm diameter could grow on substrates at temperature as low as 900℃. XRD pattern showed that SiC nanowires were cubic silicon carbide. TEM analysis showed that an amorphous carbon layer surrounds the as-deposited SiC nanowires, and the 3C-SiC nanowire has [111] growth direction with well-crystallized structure. XPS and EDX analyses showed that the as-obtained SiC nanowire has an atomic Si and C composition of about 1.0:1.2, suggesting possible applications for both electronic devices and field emitters.