首页> 外文会议>2005 Asia-Pacific Microwave Conference Proceedings vol.1: Microwaves Make People Closer >Bandpass and Bandstop Filters Using CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides
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Bandpass and Bandstop Filters Using CMOS-Compatible Micromachined Edge-Suspended Coplanar Waveguides

机译:使用兼容CMOS的微加工边缘悬浮共面波导的带通和带阻滤波器

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This paper reports the on-chip CPW transmission lines and microwave filters fabricated on CMOS-grade silicon substrates using micromachined edge-suspended CPW structures. A full wave simulation of the electromagnetic (EM) fields distribution in the CPW structures reveals that at high frequency most of the fields are concentrated in the areas along and underneath the edges of the metal lines. The CPW's and CPW-based filters' performance can be greatly improved after we remove the lossy silicon in these parts. Moreover, the silicon under the center of the metal lines is kept untouched to provide strong mechanical support to the filters, eliminating the need for high-cost MEMS packaging techniques. A bandpass filter with a passband insertion loss of-3.5dB and a bandstop filter with stopband insertion loss -17.5dB are demonstrated in this work.
机译:本文报道了使用微加工的边缘悬浮CPW结构在CMOS级硅基板上制造的片上CPW传输线和微波滤波器。对CPW结构中电磁(EM)场分布的全波仿真显示,在高频下,大多数场集中在金属线边缘及其下方的区域。除去这些零件中的有损耗硅之后,可以大大提高CPW和基于CPW的滤波器的性能。此外,金属线中心下方的硅保持不变,从而为滤波器提供了强大的机械支撑,从而消除了对高成本MEMS封装技术的需求。在这项工作中,将演示通带插入损耗为-3.5dB的带通滤波器和阻带插入损耗为-17.5dB的带阻滤波器。

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