Design and Fabrication of the Integrated DMOS-IGBT/MPS-Rectifier Power Device

摘要

A novel smart power device that integrates a DMOS-IGBT with an anti-parallel MPS-rectifier is proposed. High-voltage IGBTs used in power circuits require discrete power rectifiers in anti-parallel configuration for current conduction during transients. Integrating the rectifier and the IGBT in the same silicon chip can reduce part-count and cost of power module. The MPS rectifier is monolithically integrated into a scaled-up IGBT die by the allocation of a portion of the total silicon area for the rectifier, with both devices sharing common terminals. This paper discusses the design and fabrication aspects of a 1.2kV DMOS IGBT/MPS rectifier. Details of device design for the stripe and atomic lattice layout (ALL) cell geometries, termination design, mask layout and device fabrication will be discussed and supported with numerical simulations.