Binding Energy of an Exciton Bound to a Charged Impurity in Quantum Dots

摘要

Binding energies for an exciton (X) trapped in the two-dimensional quantum dot by a charged impurity located on the z axis at a distance from the dot plane are calculated by using the method of few-body physics. This configuration is called a barrier (D~+, X) center or a barrier (A~-, X) center. The dependences of the binding energy of the ground state of the barrier (D~+, X) and (A~-, X) centers on the electron-to-hole mass ratio σand the dot radius R for a few values of the distance d between the fixed positive ion on the z axis and the dot plane are obtained.