首页> 外文会议>2002 International Conference on Advanced Packaging and Systems Mar 10-13, 2002 Reno, Nevada >Experiment Study on Reliability of Solder Joints under Electrical Stressing - Nano-indentation, Atomic Flux Measurement
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Experiment Study on Reliability of Solder Joints under Electrical Stressing - Nano-indentation, Atomic Flux Measurement

机译:电应力下焊点可靠性的实验研究-纳米压痕,原子通量测量

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The electromigration damage in flip chip solder joints of eutectic SnPb was studied under current stressing at room temperature with the current density about 1.3xl0~4A/cm~2. The diameter of the solder joints was about 140μm. The mass accumulation near anode side and void nucleation near cathode were observed during current stressing. The nano-indentation test was first time done on solder joints for electromigration test. Surface marker movement was used to measure the atomic flux driven by electromigration and to calculate the product of effective charge number and diffusivity, DXZ~*, of the solder at room temperature. The effective charge number can be extracted with the solder diffusivity at room temperature known.
机译:研究了室温下电流应力为1.3x10〜4A / cm〜2的共晶SnPb倒装芯片焊点中的电迁移损伤。焊点的直径约为140μm。在电流应力下观察到阳极附近的质量积累和阴极附近的空核形核。纳米压痕测试是首次在焊点上进行电迁移测试。使用表面标记移动来测量由电迁移驱动的原子通量,并计算室温下焊料的有效电荷数和扩散率DXZ〜*的乘积。有效电荷数可以通过已知的室温下焊料扩散率来提取。

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