Aging of GaN GIT under repetitive short-circuit tests

摘要

In power applications, normally-off GaN-based transistors show a great potential. In this context, we present in this paper aging tests of normally-off GaN-based transistor subject to repetitive short-circuit operations. Experimental tests are detailed and the evolution of electrical parameters during aging is presented. Especially, the evolution of aging indicators like on-state resistance, saturation current, leakage current is presented in order to highlight the impact of repetitive short-circuit.