Microsystem Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China;
College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China;
Microsystem Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China;
Microsystem Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China;
Microsystem Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China;
Microsystem Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China;
China Academy of Engineering Physics, Institute of Electronic Engineering, Mianyang, China;
Switches; Probes; Silicon carbide; Current measurement; MOSFET; Photonic band gap; Voltage measurement;
机译:横向宽带隙半导体功率开关器件的理论极限估计
机译:单极开关器件的功率损耗限制:Si超结器件和宽带隙器件之间的比较
机译:高密度功率转换和宽带隙半导体功率电子开关器件
机译:自动V - I对齐,用于切换宽带隙功率器件的开关表征
机译:具有宽带隙器件和ZVT开关的交错式DC-DC转换器,用于电动汽车动力总成中的灵活DC-Link
机译:用于中频到高功率应用的宽带隙半导体开关装置的驱动电路综述
机译:380V高效率和高功率密度开关电容器电源转换器使用宽带隙半导体