首页> 外文会议>1st International Conference on Semiconductor Technology Vol.2, May 27-30, 2001, Shanghai, China >LOCALIZED ELECTROCHEMICAL DEPOSITION OF COPPER MICROSTRUCTURES (II): ARTIFACTS OF ELECTRODE-TIP GEOMETRY
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LOCALIZED ELECTROCHEMICAL DEPOSITION OF COPPER MICROSTRUCTURES (II): ARTIFACTS OF ELECTRODE-TIP GEOMETRY

机译:铜微结构的局部电化学沉积(II):电极尖端几何形状的伪像

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摘要

This paper presents an experimental demonstration and numerical investigation of the artifacts of the electrode-tip geometry on the shape and confinement of microstructures fabricated by localized electrochemical deposition. Factors such as symmetry of electrode-tip geometry, boundary of electrode insulation, and thickness of the electrode insulating material are investigated to determine their influence on the formation of deposited structures. The presented experimental work and numerical simulation suggest that all these factors highly influence the formation of deposited structures, especially when deposition is produced near the substrate surface. Moreover, it is concluded that the electrode insulating material and geometry greatly affect the deposition shape and that the reduction of the extent of insulating material around the electrode provides favorable results and a more controlled and confined deposition.
机译:本文介绍了通过局部电化学沉积制备的电极尖端几何形状对微观结构的形状和限制的伪像的实验演示和数值研究。研究诸如电极尖端几何形状的对称性,电极绝缘的边界以及电极绝缘材料的厚度等因素,以确定它们对沉积结构形成的影响。提出的实验工作和数值模拟表明,所有这些因素都极大地影响了沉积结构的形成,特别是当在基材表面附近产生沉积时。此外,得出的结论是,电极绝缘材料和几何形状会极大地影响沉积形状,并且电极周围绝缘材料范围的减小会提供有利的结果,并能更好地控制和限制沉积。

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