Fast Determination of Parasitic Resistances of GaAs MESFET on-Wafer

摘要

Based on the nonlinear large signal model of GaAs MESFET, a fast and accurate method for the determination of the parasitc resistances is presented in the paper. By applying a forward bias to the gate-source junction and a reverse bias to the draingate junction for a GaAs MESFET, only three simple DC measurements are needed to determine parasitic resistances.