High-Brightness Blue Green LEDs Grown by MBE on ZnSe Substrates

摘要

High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489 -514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) at NCSU using (100) ZnSe substrates produced at Eagle-Picher Laboratory by the Seeded Physical Vapor Transport (SPVT™) process.