A study on evaluation method of new packaging structure for high-temperature power device

摘要

High-temperature power devices using SiC as a semiconductor have attracted attention. The author's group had proposed a new packaging structure for the use of SiC power devices. The pure Al board and Ag-nano layer to age mount SiC chip was adopted in this new structure. In addition, Ni-plating was applied on the pure Al board. However, as a result of temperature cycling tests, there appeared cracks generated in Ni-plating. Therefore, the authors proposed an evaluations method to estimate the fatigue life of Ni-plating. And, the durability of this structure was calculated by finite element analysis. The material property was obtained in order to make the real model for FEA. Also, the evaluation of the effect of the thickness of Ni-plating was performed. As a result, it was found that the optimum value of the thickness of Ni-plating.