Research on CMP Process Parameters Effect on Slurry Transport

摘要

This paper describes factors influencing slurry flow beneath a wafer during CMP processes. Results from a statistically designed experiment show that platen speed, pad topography and slurry flow rate are all factors that influence the mean residence time of slurry beneath a wafer. In addition, these factors show significant interactions with each other. The amount of mixing beneath the wafer was shown to be a function only of the pad groove depth and the slurry flow rate. In pad conditioning also was shown to have a significant effect on the slurry mixing and the slurry mean residence time beneath the wafer.