Reactive Sputtered Deposition and Etched Patterning of ZnO Films for Active Matrix Flat Panel Display (AM FPD)

摘要

Deposition of ZnO films by reactive RF sputtering with metal target and patterning of the films by both wet and dry etching were investigated. The as-deposited ZnO films show a much different dependence of resistivity on pO2 from those using zinc oxide targets. For the as-deposited ZnO films, the wet etching rate in general decreases as the resistivity of the films increases. For the annealed films, the increase in the wet etching rate gets saturated with high annealing temperature. In dry etching case, the selective ratios of the ZnO to SiO2 and Si3N4 films are ～1:46 and ～1:50, respectively. We also present the influence of Ar plasma and O2 plasma treatments on ZnO films.