Fabrication of Ag gate electrodes of organic thin film transistors with the various printing technologies

摘要

In this paper, we have fabricated Ag gate electrodes of organic thin flint transistors by screen-printing combined with wet-etching process and by direct microcontact printing process. The etching resists for wet-etching were patterned by roll type microcontact printing and reverse offset printing. The screen-printed and wet-etched Ag electrodes with microcontact printed and reverse offset printed etching resist patterns exhibited both thicknesses of ~70 nm, resistivities of ~10~(-6) Ω·cm and minimum line widths of ~15 um and 50 urn, respectively, producing good geometrical and electrical characteristics for gate electrode. And direct microcontact printed Ag electrode showed a line width of 30 um, a thickness of~300 nm, a roughness less than 20 nm, and a specific resistance of ~10~(-s) Ω·cm.